Trifortune Orders AIXTRON System for GaN LEDs on Alternative Substrates

AIXTRON SE announced that Jiangsu Trifortune Electronic Technology Co. Ltd., China, has ordered an AIX G5 HT system to develop gallium nitride based high brightness light emitting diodes (HB-LEDs). The AIXTRON system will be equipped to handle 56x2-inch wafers per run and will be installed at Trifortune’s R&D center. The developed process will be transferred to mass production in the Jiangsu area upon successful completion of the research.

AIXTRON Planetary Reactor (Deposition Chamber) 8x6″ Configuration, top view (photo courtesy of AIXTRON)

Dr. Hu, Technical Head of Trifortune, comments: “We are developing GaN processes to grow LEDs on substrates that offer some advantages compared to the well-established sapphire substrates. To compete in the HB-LED market, there is a real need to achieve the maximum yield in our manufacturing process, so that products with better performance in lumen per dollar can be established. The AIX G5 HT system is widely acknowledged as having the top yields in LED mass production, along with excellently repeatable performance at high growth rates.”

Andreas Toennis, AIXTRON Chief Technology Officer, adds: “We are very pleased to contribute to Trifortune’s success and to share our comprehensive expertise in optimization of epitaxy yields with them.”

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